参数资料
型号: AP9972GP
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 3/4页
文件大小: 98K
代理商: AP9972GP
AP9972GS/P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
50
100
150
0
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
14
16
18
20
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =25 A
T C =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =35A
V G =10V
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.2
0.7
1.2
1.7
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
50
100
150
200
0246
8
10
12
14
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
相关PDF资料
PDF描述
AP9972GS 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP9973GD 3.9 A, 60 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP9973GM 3.9 A, 60 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP9973GS 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP9973GP 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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