参数资料
型号: AP9971GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 5 A, 60 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 1/5页
文件大小: 208K
代理商: AP9971GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
50mΩ
▼ Surface Mount Package
ID
5A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=100℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
/W
Data and specifications subject to change without notice
200811042
RoHS-compliant Product
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Continuous Drain Current
3, V
GS @ 10V
3.2
Pulsed Drain Current
1,2
30
Gate-Source Voltage
+25
Continuous Drain Current
3, V
GS @ 10V
5
Parameter
Rating
Drain-Source Voltage
60
1
AP9971GM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
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