参数资料
型号: AP9977GJ-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 11 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 1/4页
文件大小: 101K
代理商: AP9977GJ-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
100mΩ
▼ Surface Mount Package
ID
11A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
6
/W
Rthj-a
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
Total Power Dissipation
21
-55 to 150
200901134
Thermal Data
Parameter
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.17
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
6.8
Pulsed Drain Current
1
45
60
Gate-Source Voltage
+25
Continuous Drain Current, VGS @ 10V
11
Halogen-Free Product
1
AP9977GH/J-HF
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Parameter
Rating
Drain-Source Voltage
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9977GJ) are
available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
TO-252(H)
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