参数资料
型号: AP9T19GH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 33 A, 12 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: LEAD FREE PACKAGE-3
文件页数: 1/4页
文件大小: 71K
代理商: AP9T19GH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
12V
▼ Capable of 2.5V gate drive
RDS(ON)
16mΩ
▼ Single Drive Requirement
ID
33A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
201026041
Pulsed Drain Current
1
80
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.2
Storage Temperature Range
Total Power Dissipation
25
-55 to 150
Continuous Drain Current, VGS @ 4.5V
33
Continuous Drain Current, VGS @ 4.5V
21
Drain-Source Voltage
12
Gate-Source Voltage
±12
AP9T19GH/J
Parameter
Rating
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
G
D
S
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