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参数资料
| 型号： | APT1004RKN |
| 元件分类： | JFETs |
| 英文描述： | 3.6 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 1/4页 |
| 文件大小： | 51K |
| 代理商： | APT1004RKN |
Junction to Case
Junction to Ambient
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
RθJC
RθJA
T
L
STATIC ELECTRICAL CHARACTERISTICS
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°C, Derate Above 25°C
Operating and Storage Junction Temperature Range
G
D
1.00
°C/W
80
°C/W
300
°C
Symbol Characteristic
MIN
TYP
UNIT
MAX
Symbol Parameter
All Ratings: T
C
= 25
°C unless otherwise specified.
MAXIMUM RATINGS
S
APT1004R2KN
APT1004RKN
UNIT
1000
Volts
3.5
3.6
Amps
14.0
14.4
Amps
±30
Volts
125
Watts
-55 to 150
°C
THERMAL CHARACTERISTICS
A
TYP
MIN
MAX
UNIT
Symbol Characteristic / Test Conditions / Part Number
BV
DSS
I
DSS
I
GSS
I
D
(ON)
V
GS
(TH)
R
DS
(ON)
APT1004RKN
1000V 3.6A 4.00
APT1004R2KN
1000V 3.5A 4.20
TO-220
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-0036
Rev
C
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
(V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°C)
Gate-Source Leakage Current (V
GS
=
±30V, V
DS
= 0V)
On State Drain Current 2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
Static Drain-Source On-State Resistance 2
(V
GS
= 10V, I
D
= 0.5 I
D
[Cont.])
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT1004RKN
1000
Volts
APT1004R2KN
1000
Volts
250
1000
±100
nA
APT1004RKN
3.6
Amps
APT1004R2KN
3.5
Amps
24
Volts
APT1004RKN
4.00
Ohms
APT1004R2KN
4.20
Ohms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10050B2LC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage |
| APT10050B2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10050B2VFR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10050B2VFRG | 功能描述:MOSFET N-CH 1000V 21A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT10050B2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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