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参数资料
| 型号： | APT1004RKN |
| 元件分类： | JFETs |
| 英文描述： | 3.6 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件页数： | 4/4页 |
| 文件大小： | 51K |
| 代理商： | APT1004RKN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
C,
CAPACITANCE
(pF)
I
,
REVERSE
DRAIN
CURRENT
(AMPERES)
DR
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
I
,
DRAIN
CURRENT
(AMPERES)
D
V
,
GATE-TO-SOURCE
VOLTAGE
(VOLTS)
GS
Source
10.67 (.420)
9.65 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.14 (.045) 3-Plcs.
0.51 (.020)
2.29 (.090)
2.79 (.110)
4.83 (.190)
3.56 (.140)
1.40 (.020)
0.51 (.055)
4.09 (.161) Dia.
3.53 (.139)
Dimensions in Millimeters and (Inches)
16.51 (.650)
14.22 (.560)
6.35 (.250)
MAX.
Gate
Drain
6.86 (.270)
5.84 (.230)
1.78 (.070) 3-Plcs.
1.14 (.045)
2.92 (.115)
2.03 (.080)
3.43 (.135)
2.54 (.100)
1.14 (.045)
0.30 (.012)
4.83 (.190)
5.33 (.210)
Drain
0
.5
1.0
1.5
2.0
0
10
20
30
40
50
100
TO-220AB Package Outline
0
8
4
12
16
20
10
S
100
S
100mS
10mS
1mS
DC
10
.1
1
60
1
5
10
50 100
1000
10
1,000
10,000
C
oss
C
iss
C
rss
T
J
= +150
°C
T
J
= +25
°C
V
DS
=500V
V
DS
=200V
V
DS
=100V
1
2
5
10
20
50
100
0
10
20
30
40
50
T
C
=+25
°C
T
J
=+150
°C
SINGLE PULSE
APT1004RKN
APT1004R2KN
OPERATION HERE
LIMITED BY R
DS
(ON)
APT1004RKN
APT1004R/1004R2KN
050-0036
Rev
C
I
D
= I
D
[Cont.]
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PDF描述 |
|---|---|
| APT1004R2KN | 3.5 A, 1000 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| APT100GT120JU2 | 140 A, 1200 V, N-CHANNEL IGBT |
| APT10M07JVFR | 225 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M11JVR | 144 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10050B2LC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage |
| APT10050B2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10050B2VFR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10050B2VFRG | 功能描述:MOSFET N-CH 1000V 21A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT10050B2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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