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参数资料
| 型号： | AP9977GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 60 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP- 8 |
| 文件页数： | 2/5页 |
| 文件大小： | 212K |
| 代理商： | AP9977GM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.04
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=3A
-
100
mΩ
VGS=4.5V, ID=2A
-
125
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=3A
-
6
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=60V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=48V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±25V
-
±100
nA
Qg
Total Gate Charge
2
ID=3A
-
6
10
nC
Qgs
Gate-Source Charge
VDS=48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
2
VDS=30V
-
6
12
ns
tr
Rise Time
ID=1A
-
5
12
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
32
ns
tf
Fall Time
RD=30Ω
-3
8
ns
Ciss
Input Capacitance
VGS=0V
-
510
810
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=4A, VGS=0V,
-
27
54
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
32
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
2/4
AP9977GM
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