参数资料
型号: AP99T06AGP-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 1/4页
文件大小: 58K
代理商: AP99T06AGP-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Low On-resistance
RDS(ON)
4.2mΩ
▼ Fast Switching Characteristic
ID
135A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.9
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
Operating Junction Temperature Range
-55 to 150
201010181
Thermal Data
Parameter
1
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
85
Pulsed Drain Current
1
320
Total Power Dissipation
138.8
-55 to 150
Total Power Dissipation
2
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
3
120
Continuous Drain Current (Chip)
Parameter
Rating
Drain-Source Voltage
60
AP99T06AGP-HF
Halogen-Free Product
135
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
D
S
TO-220(P)
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相关代理商/技术参数
参数描述
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