参数资料
型号: APL501P
元件分类: JFETs
英文描述: 43 A, 500 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: HERMETIC SEALED, PPACK-4
文件页数: 2/4页
文件大小: 112K
代理商: APL501P
DYNAMIC CHARACTERISTICS
APL501P
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Z
q
JC
,THERMAL
IMPEDANCE
(°C/W)
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
SAFE OPERATING AREA CHARACTERISTICS
Test Conditions / Part Number
V
DS
= 400 V, I
DS
= 0.813A, t = 20 sec., T
C
= 60°C
Watts
050-5898
Rev
-
8-2001
Symbol
C
iss
C
oss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
MIN
TYP
MAX
6040
7300
1220
1710
510
770
13
26
20
40
54
81
11
20
UNIT
pF
ns
Symbol
SOA1
MIN
TYP
MAX
325
UNIT
Characteristic
Safe Operating Area
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6
W
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
80
60
40
20
0
80
60
40
20
0
20406080
100
0
4
8
12
16
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE2,TYPICALOUTPUTCHARACTERISTICS
FIGURE3,TYPICALOUTPUTCHARACTERISTICS
8 V
6 V
7 V
VGS=9V, 10V, 12V, 14 & 16V
5 V
8 V
6 V
7 V
5 V
9 V
VGS=10, 12, 14 & 16V
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