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参数资料
| 型号： | APL502B2 |
| 元件分类： | JFETs |
| 英文描述： | 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | B2, TMAX-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 71K |
| 代理商： | APL502B2 |
APL502B2-L
050-5896
Rev
D
8-2003
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
I D
,DRAIN
CURRENT
(AMPERES)
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
(NORMALIZED)
C,
CAPACITANCE
(pF)
V
GS
(TH),
THRESHOLD
VOLTAGE
(NORMALIZED)
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
-50 -25
0
25
50
75
100
125 150
-50 -25
0
25
50
75
100
125
150
1
5
10
50
100
500
.01
.1
1
10
50
Crss
Coss
Ciss
OPERATIONHERE
LIMITEDBYRDS(ON)
TC=+25°C
TJ =+150°C
SINGLE PULSE
100S
1mS
10mS
100mS
I
D
= 29A
V
GS
= 12V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30,000
10,000
5,000
1,000
500
100
2.5
2.0
1.5
1.0
0.5
0.0
232
100
10
5
1
.1
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
DC line
相关PDF资料 |
PDF描述 |
|---|---|
| APL502L | 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APL502J | 52 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APL602L | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APL602B2 | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APL602L | 49 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APL502B2G | 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APL502J | 功能描述:MOSFET N-CH 500V 52A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APL502L | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:LINEAR MOSFET |
| APL502LG | 功能描述:MOSFET N-CH 500V 58A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APL5101 | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:150mA, 4uA Quiescent Current Regulator |
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