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参数资料
| 型号： | APL602J |
| 元件分类： | JFETs |
| 英文描述： | 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 74K |
| 代理商： | APL602J |
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
G
D
S
050-5895
Rev
C
8-2003
APT Website - http://www.advancedpower.com
LINEAR MOSFET
SOT-227
G
S
D
ISOTOP
"UL Recognized"
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
Higher FBSOA
Higher Power Dissipation
Popular SOT-227 Package
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 A)
On State Drain Current 2 (V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 12V)
Drain-Source On-State Resistance
2 (V
GS
= 12V, 21.5A)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 480V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 2.5mA)
MIN
TYP
MAX
600
43
0.125
25
250
±100
24
UNIT
Volts
Amps
Ohms
A
nA
Volts
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL602J
600
43
172
±30
±40
565
4.52
-55 to 150
300
43
50
3000
APL602J
600V
43A 0.125
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