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参数资料
| 型号： | APL602J |
| 元件分类： | JFETs |
| 英文描述： | 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 4/4页 |
| 文件大小： | 74K |
| 代理商： | APL602J |
OPERATIONHERE
LIMITEDBYRDS(ON)
TC=+25°C
TJ =+150°C
SINGLE PULSE
100S
1mS
10mS
100mS
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APL602J
050-5895
Rev
C
8-2003
Crss
Ciss
Coss
I D
,DRAIN
CURRENT
(AMPERES)
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
(NORMALIZED)
C,
CAPACITANCE
(pF)
V
GS
(TH),
THRESHOLD
VOLTAGE
(NORMALIZED)
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
-50 -25
0
25
50
75
100
125 150
-50 -25
0
25
50
75
100
125
150
1
5
10
50
100
600
.01
.1
1
10
50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30,000
10,000
5,000
1,000
500
100
2.5
2.0
1.5
1.0
0.5
0.0
172
100
10
5
1
.1
I
D
= 21.5A
V
GS
= 12V
DC Line
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
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