参数资料
型号: APM2055NUC-TR
厂商: Anpec Electronics Corporation
英文描述: LJT 19C 19#12 SKT WALL RECP
中文描述: N沟道增强型MOS管
文件页数: 2/10页
文件大小: 149K
代理商: APM2055NUC-TR
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
APM2055N
www.anpec.com.tw
2
Symbol
Parameter
Rating
50
Unit
TO-252
T
A
=25
°
C
SOT-223
3
TO-252
10
P
D
Maximum Power Dissipation
T
A
=100
°
C
SOT-223
1.2
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
R
θ
jA
Storage Temperature Range
-55 to 150
°
C
Thermal Resistance – Junction to Ambient
50
°
C/W
APM2055N
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
V
GS
=0V, I
D
=250
μ
A
20
V
I
DSS
V
DS
=16V, V
GS
=0V
1
μ
A
V
GS(th)
V
DS
=V
GS
, I
D
=250
μ
A
0.7
0.9
1.5
V
I
GSS
Gate Leakage Current
V
GS
=
±
16V, V
DS
=0V
±
100
70
nA
V
GS
=10V, I
D
=12A
55
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=2A
75
90
R
DS(ON)
Drain-Source On-state
Resistance
140
160
m
V
SD
Diode Forward Voltage
I
S
=2A, V
GS
=0V
0.7
1.3
V
Dynamic
Q
g
Total Gate Charge
7
8.5
Q
gs
Gate-Source Charge
2.5
Q
gd
Gate-Drain Charge
V
DS
=15V, V
GS
=4.5V,
I
D
=1.5A
1.5
nC
t
d(ON)
t
r
Turn-on Delay Time
Turn-on Rise Time
9.2
18.6
14
27
t
d(OFF)
t
f
Turn-off Delay Time
31
58
Turn-off Fall Time
V
DD
=15V, I
D
=2A,
V
GS
=10V, R
G
=6
16
21
ns
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
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