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参数资料
| 型号： | APM2070PD |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P沟道增强型MOS管 |
| 文件页数： | 9/10页 |
| 文件大小： | 125K |
| 代理商： | APM2070PD |
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Test item
Method
Description
SOLDERABILITY
HOLT
PCT
TST
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
245
°
C, 5 SEC
1000 Hrs Bias @125
°
C
168 Hrs, 100
%
RH, 121
°
C
-65
°
C~150
°
C, 200 Cycles
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
'
Table 2. Pb-free Process
–
Package Classification Reflow Temperatures
Package Thickness
Volume mm
3
<350
<1.6 mm
260 +0
°
C*
1.6 mm
–
2.5 mm
260 +0
°
C*
≥
2.5 mm
250 +0
°
C*
*Tolerance: The device manufacturer/supplier
shall
assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0
°
C.
For example 260
°
C+0
°
C) at the rated MSL level.
Volume mm
3
350-2000
260 +0
°
C*
250 +0
°
C*
245 +0
°
C*
Volume mm
3
>2000
260 +0
°
C*
245 +0
°
C*
245 +0
°
C*
Table 1. SnPb Entectic Process
–
Package Peak Reflow Temperatures
Package Thickness
Volume mm
3
<350
240 +0/-5
°
C
225 +0/-5
°
C
Volume mm
3
≥
350
225 +0/-5
°
C
225 +0/-5
°
C
<2.5 mm
≥
2.5 mm
!)#!$%
!&*
相关PDF资料 |
PDF描述 |
|---|---|
| APM2070PDC-TR | P-Channel Enhancement Mode MOSFET |
| APM2070PDC-TRL | P-Channel Enhancement Mode MOSFET |
| APM2070PDC-TU | P-Channel Enhancement Mode MOSFET |
| APM2070PDC-TUL | P-Channel Enhancement Mode MOSFET |
| APM2070PU | P-Channel Enhancement Mode MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APM2070PDC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
| APM2070PDC-TRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
| APM2070PDC-TU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
| APM2070PDC-TUL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
| APM2070PU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
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