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参数资料
| 型号： | APM2301AAC-TUL |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P沟道增强型MOS管 |
| 文件页数： | 2/10页 |
| 文件大小： | 123K |
| 代理商： | APM2301AAC-TUL |
!"#$$%
#
(T
A
= 25
°
C unless otherwise noted)
!"#
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
Drain-Source Voltage
-20
Gate-Source Voltage
±12
V
Continuous Drain Current
-3
300
μ
s Pulsed Drain Current
Diode Continuous Forward Current
V
GS
=-4.5V
-10
A
-1
A
T
J
T
STG
Maximum Junction Temperature
150
Storage Temperature Range
-55 to 150
°
C
T
A
=25
°
C
T
A
=100
°
C
0.83
0.3
P
D
*
Maximum Power Dissipation
W
R
θ
JA
*
Thermal Resistance-Junction to Ambient
150
°
C/W
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
APM2301AA
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=-250
μ
A
V
DS
=-16V, V
GS
=0V
-20
V
-1
I
DSS
Zero Gate Voltage Drain Current
T
J
=85
°
C
-30
μ
A
V
GS(th)
I
GSS
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=±12V, V
DS
=0V
V
GS
=-4.5V, I
DS
=-3A
V
GS
=-2.5V, I
DS
=-2A
I
SD
=-1.25A, V
GS
=0V
-0.5
-0.6
-1
V
Gate Leakage Current
±100
nA
72
90
R
DS(ON)
a
Drain-Source On-state Resistance
98
115
m
V
SD
a
Diode Forward Voltage
-0.7
-1.3
V
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
9
12
3
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-3A
1.2
nC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APM2301AC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
| APM2301CA | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
| APM2301CAC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
| APM2301CAC-TRG | 制造商:SinoPower 功能描述:P-CHANNL MOSFET 20V/3A SOT-23 |
| APM2301CAC-TRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:P-Channel Enhancement Mode MOSFET |
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