参数资料
型号: APM2301AAC-TUL
厂商: Anpec Electronics Corporation
英文描述: P-Channel Enhancement Mode MOSFET
中文描述: P沟道增强型MOS管
文件页数: 9/10页
文件大小: 123K
代理商: APM2301AAC-TUL
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Test item
Method
Description
SOLDERABILITY
HOLT
PCT
TST
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
245
°
C,5 SEC
1000 Hrs Bias @ 125
°
C
168 Hrs, 100% RH, 121
°
C
-65
°
C ~ 150
°
C, 200 Cycles
"'+
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
('
Table 2. Pb-free Process
Package Classification Reflow Temperatures
Package Thickness
Volume mm
3
<350
<1.6 mm
260 +0
°
C*
1.6 mm
2.5 mm
260 +0
°
C*
2.5 mm
250 +0
°
C*
*Tolerance: The device manufacturer/supplier
shall
assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0
°
C.
For example 260
°
C+0
°
C) at the rated MSL level.
Volume mm
3
350-2000
260 +0
°
C*
250 +0
°
C*
245 +0
°
C*
Volume mm
3
>2000
260 +0
°
C*
245 +0
°
C*
245 +0
°
C*
Table 1. SnPb Entectic Process
Package Peak Reflow Temperatures
Package Thickness
Volume mm
3
<350
240 +0/-5
°
C
225 +0/-5
°
C
Volume mm
3
350
225 +0/-5
°
C
225 +0/-5
°
C
<2.5 mm
2.5 mm
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