参数资料
型号: APM2504NUC-TR
厂商: Anpec Electronics Corporation
英文描述: N-Channel Enhancement Mode MOSFET
中文描述: N沟道增强型MOS管
文件页数: 3/10页
文件大小: 130K
代理商: APM2504NUC-TR
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+
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(T
A
= 25
°
C unless otherwise noted)
APM2504NU
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Avalanche Ratings
E
AS
Drain-Source Avalanche Energy
I
D
=35A, V
DD
=15V
100
mJ
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
V
GS
=0V, I
DS
=250
μ
A
V
DS
=20V, V
GS
=0V
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=40A
V
GS
=4.5V, I
DS
=20A
25
V
1
μ
A
V
1.3
1.8
2.5
±100
nA
3.6
4.5
R
DS(ON)
a
Drain-Source On-state Resistance
5.4
7
m
Diode Characteristics
V
SD
Diode Forward Voltage
a
I
SD
=20A, V
GS
=0V
0.8
1.3
V
Dynamic Characteristics
b
R
G
Gate Resistance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
d(ON)
Turn-on Delay Time
T
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
V
GS
=0V,V
DS
=0V,F=1MHz
1
pF
4350
920
pF
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
670
pF
18
34
ns
21
39
ns
85
130
ns
V
DD
=10V, R
L
=10
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6
25
40
ns
Gate Charge Characteristics
b
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Notes:
a : Pulse test ; pulse width
300
μ
s, duty cycle
2%.
b : Guaranteed by design, not subject to production testing.
38.5
50
nC
13.6
nC
V
DS
=15V, V
GS
=4.5V,
I
DS
=20A
17.2
nC
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