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参数资料
| 型号： | APM2512N |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N沟道增强型MOS管 |
| 文件页数： | 2/9页 |
| 文件大小： | 205K |
| 代理商： | APM2512N |
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2003
www.anpec.com.tw
2
APM2512N
Symbol
Parameter
Rating
Unit
I
D
I
DM
Maximum Drain Current – Continuous
40
Maximum Pulsed Drain Current ( pulse width
≤
300
μ
s)
90
A
T
c
=25
°
C
50
P
D
Maximum Power Dissipation
T
c
=100
°
C
20
W
T
J
,T
STG
Maximum Operating and Storage Junction Temperature
-55 to 150
°
C
R
θ
JA
R
θ
JC
*
Thermal Resistance – Junction to Ambient
50
Thermal Resistance – Junction to Case
* Mounted on 1in
2
pad area of PCB.
2.5
°
C/W
APM2512N
Min.
Typ.
Symbol
Parameter
Test Condition
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=250
μ
A
25
V
I
DSS
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
V
DS
=20V , V
GS
=0V
1
μ
A
V
GS(th)
I
GSS
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
20V , V
DS
=0V
V
GS
=10V , I
DS
=20A
V
GS
=4.5V , I
DS
=10A
I
SD
=10A , V
GS
=0V
1
1.5
9
2
V
nA
±
100
12
R
DS(ON)
a
13
0.9
20
1.3
m
V
SD
a
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Notes
a
: Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2
%
b
: Guaranteed by design, not subject to production testing
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
28
3.6
8.4
10
15
35
15
1560
345
245
38
20
25
50
20
V
DS
=15V , I
DS
= 10A
V
GS
=10V ,
nC
V
DD
=10V , I
DS
=10A ,
V
GEN
=10V , R
G
=6
ns
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
pF
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings ( Cont.)
(T
C
= 25
°
C unless otherwise noted)
相关PDF资料 |
PDF描述 |
|---|---|
| APM2512NUC-TRL | N-Channel Enhancement Mode MOSFET |
| APM2522NU | N-Channel Enhancement Mode MOSFET |
| APM2522NUC-TR | N-Channel Enhancement Mode MOSFET |
| APM2522NUC-TRL | N-Channel Enhancement Mode MOSFET |
| APM2522NUC-TU | N-Channel Enhancement Mode MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APM2512NU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
| APM2512NUC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
| APM2512NUC-TRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
| APM2512NUC-TU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
| APM2512NUC-TUL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
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