参数资料
型号: APM2700CCCTUL
厂商: Anpec Electronics Corporation
英文描述: Dual enhancement Mode MOSFET
中文描述: 双增强型MOS管
文件页数: 3/13页
文件大小: 166K
代理商: APM2700CCCTUL
!
"#!$!%!&'(()
.
APM2700C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics (Cont.)
I
SD
=0.5A, V
GS
=0V
N-Ch
0.8
1.3
V
SD
a
Diode Forward Voltage
I
SD
=-0.5A, V
GS
=0V
P-Ch
-0.8
-1.3
V
Dynamic Characteristics
b
N-Ch
130
C
iss
Input Capacitance
P-Ch
140
N-Ch
25
C
oss
Output Capacitance
P-Ch
40
N-Ch
15
C
rss
Reverse Transfer
Capacitance
N-Channel
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,
V
DS
=-20V,
Frequency=1.0MHz
P-Ch
30
pF
N-Ch
2
4
t
d(ON)
Turn-on Delay Time
P-Ch
3
6
N-Ch
17
32
T
r
Turn-on Rise Time
P-Ch
18
33
N-Ch
4
8
t
d(OFF)
Turn-off Delay Time
P-Ch
10
19
N-Ch
18
33
T
f
Turn-off Fall Time
N-Channel
V
DD
=10V, R
L
=10
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6
P-Channel
V
DD
=-10V, R
L
=10
,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6
P-Ch
20
37
ns
Gate Charge Characteristics
b
N-Ch
4.2
5.5
Q
g
Total Gate Charge
P-Ch
7
9
N-Ch
0.6
Q
gs
Gate-Source Charge
P-Ch
1.1
N-Ch
0.6
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=10V, V
GS
=4.5V,
I
DS
=1.8A
P-Channel
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-1.2A
P-Ch
1.1
nC
Notes:
a : Pulse test ; pulse width
300
μ
s, duty cycle
2
%.
b : Guaranteed by design, not subject to production testing.
!"#$%
(T
A
= 25
°
C unless otherwise noted)
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