参数资料
型号: APM2701CGC-TR
厂商: Anpec Electronics Corporation
英文描述: Dual Enhancement Mode MOSFET (N and P-Channel)
中文描述: 双增强型MOS管(N和P沟道)
文件页数: 3/13页
文件大小: 235K
代理商: APM2701CGC-TR
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Jun., 2006
www.anpec.com.tw
3
APM2701CG
APM2701CG
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics (Cont.)
I
SD
=0.5A, V
GS
=0V
N-Ch
0.7
1.3
V
SD
a
Diode Forward Voltage
I
SD
=-0.5A, V
GS
=0V
P-Ch
-0.7
-1.3
V
Dynamic Characteristics
b
N-Ch
270
C
iss
Input Capacitance
P-Ch
300
N-Ch
70
C
oss
Output Capacitance
P-Ch
50
N-Ch
50
C
rss
Reverse Transfer
Capacitance
N-Channel
V
GS
=0V,
V
DS
=10V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,
V
DS
=-10V,
Frequency=1.0MHz
P-Ch
30
pF
N-Ch
6
12
t
d(ON)
Turn-on Delay Time
P-Ch
6
10
N-Ch
5
10
T
r
Turn-on Rise Time
P-Ch
8
12
N-Ch
12
23
t
d(OFF)
Turn-off Delay Time
P-Ch
10
15
N-Ch
6
12
T
f
Turn-off Fall Time
N-Channel
V
DD
=10V, R
L
=10
,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6
P-Channel
V
DD
=-10V, R
L
=10
,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6
P-Ch
5
10
ns
Gate Charge Characteristics
b
N-Ch
5
6.5
Q
g
Total Gate Charge
P-Ch
4
6
N-Ch
0.5
Q
gs
Gate-Source Charge
P-Ch
0.6
N-Ch
1.6
Q
gd
Gate-Drain Charge
N-Channel
V
DS
=10V, V
GS
=4.5V,
I
DS
=3A
P-Channel
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-1.5A
P-Ch
1
nC
Notes:
a : Pulse test ; pulse width
300
μ
s, duty cycle
2
%.
b : Guaranteed by design, not subject to production testing.
Electrical Characteristics ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
相关PDF资料
PDF描述
APM2701CGC-TRL Dual Enhancement Mode MOSFET (N and P-Channel)
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相关代理商/技术参数
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APM2701CGC-TRL 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual Enhancement Mode MOSFET (N and P-Channel)
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APM2800BC-TU 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET with Schottky Diode