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参数资料
| 型号： | APM4410 |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | N-Channel Enhancement Mode MOSFET |
| 中文描述： | N沟道增强型MOS管 |
| 文件页数： | 2/9页 |
| 文件大小： | 514K |
| 代理商： | APM4410 |
Copyright
ANPEC Electronics Corp.
Rev. A.5 - July., 2002
APM4410
www.anpec.com.tw
2
Thermal Characteristics
Symbol
Parameter
Rating
Unit
T
J
Maximum Junction Temperature
150
T
STG
Storage Temperature Range
-55 to 150
°C
R
θ
JA
Thermal Resistance - Junction to Ambient
50
°C/W
Electrical Characteristics
(T
A
=25°C unless otherwise noted)
APM4410
Min.
Typ
a
.
Max.
Symbol
Parameter
Test Condition
Unit
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250
μ
A
V
DS
=24V, V
GS
=0V
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
D
=11.5A
30
V
Zero Gate Voltage Drain Current
1
uA
Gate Threshold Voltage
1
3
V
Gate Leakage Current
±100
nA
9
11
R
DS(ON)
Drain-Source On-state Resistance
b
V
GS
=4.5V, I
D
=5A
I
SD
=2.3A, V
GS
=0V
14.5
16
m
V
SD
Diode Forward Voltage
b
0.6
1.2
V
Dynamic
a
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
C
iss
C
oss
C
rss
Total Gate Charge
45
60
Gate-Source Charge
10
Gate-Drain Charge
V
DS
=15V, V
GS
=10V,
I
D
=10A
8
nC
Turn-on Delay Time
16
25
Turn-on Rise Time
24
35
Turn-off Delay Time
78
110
Turn-off Fall Time
V
DD
=15V, R
L
=15
,
I
D
=1A , V
GEN
=10V,
R
G
=6
,
42
80
ns
Input Capacitance
2000
Output Capacitance
400
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V
Frequency = 1.0MHZ
220
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2%
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