参数资料
型号: APM4472KC-TRG
厂商: ANPEC ELECTRONICS CORP
元件分类: JFETs
英文描述: 12 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封装: GREEN, SOP-8
文件页数: 2/10页
文件大小: 104K
代理商: APM4472KC-TRG
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
APM4472K
10
Table 2. Pb-free Process
– Package Classification Reflow Temperatures
Package Thickness
Volume mm
3
<350
Volume mm
3
350-2000
Volume mm
3
>2000
<1.6 mm
260 +0
°C*
260 +0
°C*
260 +0
°C*
1.6 mm
– 2.5 mm
260 +0
°C*
250 +0
°C*
245 +0
°C*
≥2.5 mm
250 +0
°C*
245 +0
°C*
245 +0
°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0
°C. For example 260°C+0°C)
at the rated MSL level.
Table 1. SnPb Eutectic Process
– Package Peak Reflow Temperatures
Package Thickness
Volume mm
3
<350
Volume mm
3
≥350
<2.5 mm
240 +0/-5
°C
225 +0/-5
°C
≥2.5 mm
225 +0/-5
°C
225 +0/-5
°C
Classification Reflow Profiles (Cont.)
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
相关PDF资料
PDF描述
APM4472KC-TRL 12 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
APT1001R1AVR 9 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
APT1001R1BNR-GULLWING 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT1001RBNR-GULLWING 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT1001R1BNR-BUTT 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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