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参数资料
| 型号： | APM4472KC-TRG |
| 厂商： | ANPEC ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封装： | GREEN, SOP-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 104K |
| 代理商： | APM4472KC-TRG |
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Apr., 2008
APM4472K
2
Electrical Characteristics (T
A = 25°C unless otherwise noted)
Absolute Maximum Ratings (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±20
V
ID*
Continuous Drain Current
12
IDM*
300
s Pulsed Drain Current
VGS=10V
50
A
IS*
Diode Continuous Forward Current
3
A
TJ
Maximum Junction Temperature
150
TSTG
Storage Temperature Range
-55 to 150
°C
TA=25°C
2
PD*
Maximum Power Dissipation
TA=100°C
0.8
W
RθJA*
Thermal Resistance-Junction to Ambient
62.5
°C/W
Note:
*Surface Mounted on 1in
2 pad area, t
≤ 10sec.
APM4472K
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250A
40
V
VDS=32V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
TJ=85°C
30
A
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250A
1.3
2
3
V
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
±100
nA
VGS=10V, IDS=12A
7.5
9.5
RDS(ON)
a
Drain-Source On-state Resistance
VGS=4.5V, IDS=8A
10.5
14
m
Diodes Characteristics
b
VSD
a
Diode Forward Voltage
ISD=3A, VGS=0V
0.7
1.1
V
trr
b
Reverse Recovery Time
30
ns
qrr
b
Reverse Recovery Charge
ISD=12A, dlSD/dt=100A/s
31
nC
相关PDF资料 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APM4500 | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual Enhancement Mode MOSFET (N-and P-Channel) |
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| APM4532 | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual Enhancement Mode MOSFET (N-and P-Channel) |
| APM4532K | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual Enhancement Mode MOSFET (N-and P-Channel) |
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