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参数资料
| 型号： | APM9933 |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | Dual P-Channel Enhancement Mode MOSFET |
| 中文描述： | 双P沟道增强型MOS管 |
| 文件页数： | 2/9页 |
| 文件大小： | 124K |
| 代理商： | APM9933 |
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Feb., 2003
www.anpec.com.tw
2
APM9933
APM9933
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Gate Threshold Voltage
Temperature Coefficient
V
GS
=0V , I
DS
=-250
μ
A
-20
V
BV
DSS
T
j
I
D
=-250
μ
A, Referenced to 25°C
-16
mV/°C
I
DSS
V
DS
=-16V , V
GS
=0V
-1
μ
A
V
GS(th)
I
GSS
V
GS(th)
T
j
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=
±
12V , V
DS
=0V
-0.5
-0.7
-1
V
nA
±
100
I
D
=-250
μ
A, Referenced to 25°C
2.5
mV/°C
V
GS
=-4.5V , I
DS
=-3.4A
V
GS
=-3.0V , I
DS
=-2.9A
V
GS
=-2.7V , I
DS
=-2.6A
V
GS
=-4.5V , V
DS
=-5.0V
V
DS
=-4.5V , I
D
=-3.8A
I
SD
=-2.0A , V
GS
=0V
45
70
52
80
R
DS(ON)
a
Drain-Source On-state
Resistance
60
100
m
I
D(on)
g
FS
V
SD
On-State Drain Current
Forward Transconductance
Diode Forward Voltage
-10
A
S
V
10
-0.7
a
-1.3
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Notes
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
12.7
1.75
2.8
12
25
52
18
1290
300
210
15
V
DS
=-6V , I
DS
=-3.5A
V
GS
=-4.5V
nC
21
42
85
32
V
DD
=-6V , I
DS
=-1A ,
V
GEN
=-4.5V , R
G
=6
,
R
L
=6
ns
V
GS
=0V
V
DS
=-15V
Frequency=1.0MHz
pF
a
: Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2
%
b
: Guaranteed by design, not subject to production testing
Absolute Maximum Ratings ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
Symbol
P
D
Parameter
Rating
2.5
Unit
T
A
=25
°
C
Maximum Power Dissipation
T
A
=100
°
C
1.0
W
T
J
Maximum Junction Temperature
150
°
C
T
STG
R
θ
jA
Storage Temperature Range
-55 to 150
°
C
Thermal Resistance – Junction to Ambient
50
°
C/W
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
相关PDF资料 |
PDF描述 |
|---|---|
| APM9933KC-TU | Dual P-Channel Enhancement Mode MOSFET |
| APM9935K | Dual P-Channel Enhancement Mode MOSFET |
| APM9935KC-TR | Dual P-Channel Enhancement Mode MOSFET |
| APM9935KC-TRL | Dual P-Channel Enhancement Mode MOSFET |
| APM9935KC-TU | Dual P-Channel Enhancement Mode MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APM9933KC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual P-Channel Enhancement Mode MOSFET |
| APM9933KC-TU | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual P-Channel Enhancement Mode MOSFET |
| APM9935 | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual P-Channel Enhancement Mode MOSFET |
| APM9935K | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual P-Channel Enhancement Mode MOSFET |
| APM9935KC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual P-Channel Enhancement Mode MOSFET |
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