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参数资料
| 型号： | APM9966OC-TR |
| 厂商： | Anpec Electronics Corporation |
| 英文描述： | Dual N-Channel Enhancement Mode MOSFET |
| 中文描述： | 双N沟道增强型MOS管 |
| 文件页数： | 3/12页 |
| 文件大小： | 151K |
| 代理商： | APM9966OC-TR |
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Mar., 2003
www.anpec.com.tw
3
APM9966/ C
APM9966/C
Min.
Typ.
Symbol
Parameter
Test Condition
Max.
Unit
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage V
GS
=0V , I
DS
=250
μ
A
Zero Gate Voltage Drain Current
Gate Threshold Voltage
20
V
V
DS
=16V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
10V , V
DS
=0V
1
μ
A
V
0.5
0.7
1
Gate Leakage Current
±
100
nA
V
GS
=4.5V , I
DS
=6A
19
23
SOP-8
V
GS
=2.5V , I
DS
=5.2A
27
33
V
GS
=4.5V , I
DS
=6A
21
25
R
DS(ON)
a
Drain-Source On-state
Resistance
TSSOP-8
V
GS
=2.5V , I
DS
=5.2A
29
35
m
V
SD
a
Diode Forward Voltage
I
SD
=1.7A , V
GS
=0V
0.8
1.1
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
14
3.5
2.1
25
22
67
36
780
165
105
18
V
DS
=10V , I
DS
= 1A
V
GS
=4.5V ,
nC
47
42
122
67
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=0.2
ns
V
GS
=0V
V
DS
=15V
Frequency=1.0MHz
pF
Notes
a
: Pulse test ; pulse width
≤
300
μ
s, duty cycle
≤
2
%
b
: Guaranteed by design, not subject to production testing
Electrical Characteristics ( Cont.)
(T
A
= 25
°
C unless otherwise noted)
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相关代理商/技术参数 |
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| APM9968C | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:N-Channel Enhancement Mode MOSFET |
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| APM9968COC-TR | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual N-Channel Enhancement Mode MOSFET |
| APM9968COC-TRL | 制造商:ANPEC 制造商全称:Anpec Electronics Coropration 功能描述:Dual N-Channel Enhancement Mode MOSFET |
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