- 您现在的位置：买卖IC网 > PDF目录36700 > APT1001RSVFRG (MICROSEMI POWER PRODUCTS GROUP) 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT1001RSVFRG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 代理商： | APT1001RSVFRG |
050-5596
Rev
C
5-2004
Typical Performance Curves
APT1001RBVFR_SVFR
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE2,TYPICALOUTPUTCHARACTERISTICS
FIGURE3,TYPICALOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TYPICALTRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
100
200
300
400
500
0
4
8
12
16
20
0
2468
0
5
10
15
20
25
30
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
I
D = 0.5 ID [Cont.]
V
GS = 10V
20
16
12
8
4
0
1.5
1.4
1.2
1.0
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
20
16
12
8
4
0
40
30
20
10
0
12
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
TJ = +125°C
4.5V
4V
VGS=6V, 10V & 15V
5V
4.5V
VGS=15V
VGS=6V & 10V
3.5V
4V
NORMALIZED TO
V
GS = 10V @ 0.5 ID [Cont.]
相关PDF资料 |
PDF描述 |
|---|---|
| APT1001RBVFR | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1001RSVR | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001RSVR | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001RSVRG | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10021JLL | 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1001RSVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT1001RSVRG | 功能描述:MOSFET N-CH 1000V 11A D3PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT10021DFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 1KV V(BR)DSS | 40A I(D) |
| APT10021DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT10021JFLL | 功能描述:MOSFET N-CH 1000V 37A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
发布紧急采购，3分钟左右您将得到回复。