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参数资料
| 型号： | APT10026JN |
| 元件分类： | JFETs |
| 英文描述： | 33 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 4/4页 |
| 文件大小： | 63K |
| 代理商： | APT10026JN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50 100
500 1000
.1
.5
1
5
10
50
0
200
400
600
800
1000
0
0.4
0.8
1.2
1.6
2.0
APT10026JN
TC =+25°C
TJ =+150°C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
50,000
10,000
5,000
1,000
500
100
400
100
50
10
5
1
I
D
= I
D
[Cont.]
TJ =+150°C
TJ =+25°C
TJ =-55°C
Ciss
Coss
Crss
OPERATION HERE
LIMITED BY RDS (ON)
10
S
100
S
1mS
10mS
100mS
DC
VDS=100V
VDS=200V
VDS=500V
050-0038
Rev
F
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP) Package Outline
ISOTOP is a Registered Trademark of SGS Thomson.
APT Reserves the right to change, without notice, the specifications and information contained herein.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10026JNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 33A I(D) |
| APT10026L2FLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10026L2FLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10026L2FLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT10026L2LL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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