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参数资料
| 型号： | APT10026L2LL |
| 元件分类： | JFETs |
| 英文描述： | 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 103K |
| 代理商： | APT10026L2LL |
050-7024
Rev
B
12-2003
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
G
D
S
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular TO-264 MAX Package
TO-264
Max
APT10026L2LL
1000V
38A 0.260
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7
R
MOSFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
Drain-Source On-State Resistance 2
(V
GS
= 10V, 19A)
Zero Gate Voltage Drain Current (V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
1000
0.260
100
500
±100
35
APT10026L2LL
1000
38
152
±30
±40
893
7.14
-55 to 150
300
38
50
3200
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10026L2LL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10026L2LLG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 1KV 38A 3-Pin(3+Tab) TO-264 MAX 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT10026RKVR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps|MOSFETs |
| APT1002R4AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5.5A I(D) | TO-3 |
| APT1002R4BN | 制造商: 功能描述: 制造商:undefined 功能描述: |
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