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参数资料
| 型号： | APT1002RBN |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件页数： | 4/4页 |
| 文件大小： | 50K |
| 代理商： | APT1002RBN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
TO-247AD Package Outline
050-0009
Rev
B
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2-Plcs.
T =+25
°C
T =+150
°C
SINGLE PULSE
C
J
1
60
0
8
4
12
16
20
2
1
5
10
100
1,000
10,000
100
50
0
.5
1.0
1.5
2.0
10
30
50
040
20
J
T =+150
°C
T =+25
°C
J
Crss
iss
C
oss
C
V
=500V
DS
10
DC
100mS
10mS
1mS
100
S
10
S
0
20
40
60
80
100
APT1002R/1002R4BN
1
5
10
50 100
1000
DS
V
=200V
V
=100V
DS
I
D
= I
D
[Cont.]
APT1002RBN
APT1002R4BN
OPERATION HERE
LIMITED BY R
(ON)
DS
APT1002R/1002R4BN
.1
相关PDF资料 |
PDF描述 |
|---|---|
| APT1002R4BN | 6.5 A, 1000 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT10030L2VFR | 33 A, 1000 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10043JVR | 22 A, 1000 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10045JLL | 21 A, 1000 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10050JN | 20.5 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1002RBNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 7A I(D) | TO-247AD |
| APT1002RCN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1002RDN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT10030L2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10030L2VFR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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