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参数资料
| 型号： | APT10030L2VFR |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | LJT 61C 61#20 SKT WALL RECP |
| 中文描述： | 电源MOS V是一个高电压N新一代通道增强型功率MOSFET。 |
| 文件页数： | 2/2页 |
| 文件大小： | 79K |
| 代理商： | APT10030L2VFR |
ADVANCE TECHNICAL
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
INFORMATION
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Fall Time
APT10030L2VFR
MAX
0
TO-264 MAX
TM
(L2) Package Outline
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.762.79 (.110)
3.18 (.125)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = 5.88mH, R
G
=
25
W
, Peak I
L
= 33A
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
= 10V
DD
= 0.5 V
DSS
= I
D
[Cont.] @ 25°C
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6
W
MIN
TYP
10600
1010
520
600
41
275
19
25
90
12
UNIT
pF
nC
ns
MIN
TYP
MAX
33
132
1.3
5
310
625
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
2.0
6.0
15
26
THERMAL CHARACTERISTICS
Symbol
R
q
JC
R
q
JA
MIN
TYP
MAX
0.15
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
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相关代理商/技术参数 |
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| APT10030L2VFR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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| APT10030L2VRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
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