- 您现在的位置：买卖IC网 > PDF目录36701 > APT10035B2FLLG (MICROSEMI POWER PRODUCTS GROUP) 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT10035B2FLLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 181K |
| 代理商： | APT10035B2FLLG |
Preliminary Product Brief
May 2003
AGR18060E
60 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18060E is high-voltage, gold-metalized, lat-
erally diffused metal oxide semiconductor (LDMOS)
RF power transistor suitable for global system for
mobile communication (GSM), enhanced data for
global evolution (EDGE), and multicarrier class AB
power amplifier applications. This device is manufac-
tured using advanced LDMOS technology offering
state-of-the-art performance and reliability. It is pack-
aged in an industry-standard package and is capable
of delivering a minimum output power of 60 W which
makes it ideally suited for today’s wireless base sta-
tion RF power amplifier applications.
Figure 1. Available Packages
Features
s
Typical performance ratings for GSM EDGE
(f = 1.840 GHz, POUT = 15 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
s
Typical performance over entire DCS band:
— P1dB: 60 W typ.
— Power gain: @ P1dB = 14 dB.
— Efficiency @ P1dB = 45% typ.
— Return loss: –12 dB.
s
High-reliability gold-metalization process.
s
Low hot carrier injection (HCI) induced bias drift
over 20 years.
s
Internally matched.
s
High gain, efficiency, and linearity.
s
Integrated ESD protection.
s
60 W minimum output power.
s
Device can withstand 10:1 voltage standing wave
ration (VSWR) at 26 Vdc, 1.840 GHz, 60 W contin-
uous wave (CW) output power.
s
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR18060EU
AGR18060EF
Parameter
Sym
Value
Unit
Thermal Resistance,
Junction to Case:
AGR18060EU
AGR18060EF
R
θJC
R
θJC
1.0
TBD
°C/W
Parameter
Sym
Value
Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS
–0.5, 15
Vdc
Drain Current—Continuous
ID
6.2
Adc
Total Dissipation at TC = 25 °C:
AGR18060EU
AGR18060EF
PD
175
TBD
W
Derate Above 25
°C:
AGR18060EU
AGR18060EF
—
1.0
TBD
W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range
TSTG –65, 150
°C
Device
Minimum
Threshold
Class
HBM
CDM
HBM
CDM
AGR18060E
——
1TBD
相关PDF资料 |
PDF描述 |
|---|---|
| APT10035LFLLG | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT1003RBFLLG | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC |
| APT1003RBFLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC |
| APT1003RBFLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC |
| APT1003RSFLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10035B2LL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10035B2LL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10035B2LLG | 功能描述:MOSFET N-CH 1000V 28A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT10035JFLL | 功能描述:MOSFET N-CH 1000V 25A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT10035JFLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
发布紧急采购，3分钟左右您将得到回复。