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参数资料
| 型号： | APT10035B2FLLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 3/3页 |
| 文件大小： | 181K |
| 代理商： | APT10035B2FLLG |
Agere Systems Inc.
5
Preliminary Data Sheet
AGR09030E
November 2004
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C.
IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8—13. OFFSET 1 = 750 kHz, 30 kHz BW. OFFSET 2 = 1.98 MHz, 30 kHz BW.
Figure 4. ACPR vs. POUT
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C, WAVEFORM = CW.
Figure 5. Power Gain and Return Loss vs. Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
5
10
15
20
POUT (W)X
ACPR
(dBc)
X
ACP+
ACP-
ACP1+
ACP1-
FREQUENCY = 880 MHz
10
11
12
13
14
15
16
17
18
19
20
21
22
23
860
865
870
875
880
885
890
895
900
FREQUENCY (MHz)X
POWER
GAIN
(dB)
X
-18.0
-16.0
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
INPUT
RET
URN
LOSS
(dB)
X
POWER GAIN
POUT = 5 W
POUT = 40 W
RETURN LOSS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10035B2LL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10035B2LL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10035B2LLG | 功能描述:MOSFET N-CH 1000V 28A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT10035JFLL | 功能描述:MOSFET N-CH 1000V 25A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT10035JFLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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