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参数资料
| 型号： | APT1003RSLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 5/5页 |
| 文件大小： | 101K |
| 代理商： | APT1003RSLL |
050-7119
Rev
A
1-2004
APT1003RBLL_SLL
Typical Performance Curves
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3
PAK Package Outline
IC
D.U.T.
APT15DF100
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
90%
Switching Energy
t
d(off)
t
f
10%
0
Drain Current
Drain Voltage
GateVoltage
T
J
125°C
10%
90%
Switching Energy
t
d(on)
t
r
10%
5%
Drain Current
Drain Voltage
GateVoltage
T
J
125°C
5%
相关PDF资料 |
PDF描述 |
|---|---|
| APT1003RBLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1003RBLLG | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1003RSLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1003RBLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1004RCN | 3.6 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1003RSLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT1004 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT10040B2VFR | 制造商:Advanced Power Technology 功能描述:MOSFET Transistor, N-Channel, TO-247VAR |
| APT10040B2VFR_02 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10040B2VFRG | 功能描述:MOSFET N-CH 1000V 25A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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