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参数资料
| 型号： | APT1004RCN |
| 元件分类： | JFETs |
| 英文描述： | 3.6 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | TO-254AA, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 134K |
| 代理商： | APT1004RCN |
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
APT1004RCN 1000V 3.6A 4.00
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
050-0017
Rev
B
POWER MOS IVTM
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
TO-254
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Pulsed Drain Current 1
Gate-Source Voltage
Total Power Dissipation @ T
C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APT1004RCN
1000
3.6
14.4
±30
125
1.0
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
1000
3.6
4.00
250
1000
±100
2
4
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
On State Drain Current 2 (V
DS > ID(ON) x RDS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (V
GS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1.0mA)
Symbol
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
Characteristic
Safe Operating Area
Test Conditions
V
DS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
I
DS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
MIN
TYP
MAX
125
UNIT
Watts
G
D
S
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