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参数资料
| 型号： | APT1004RGN |
| 元件分类： | JFETs |
| 英文描述： | 3.3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 文件页数： | 1/4页 |
| 文件大小： | 50K |
| 代理商： | APT1004RGN |
MAXIMUM RATINGS
All Ratings: T
C
= 25
°C unless otherwise specified.
APT1004RGN 1000V 3.3A 4.00
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
050-0019
Rev
B
POWER MOS IV
TM
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
G
D
S
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
°C
Pulsed Drain Current 1
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
APT1004RGN
1000
3.3
13.2
±30
100
0.8
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/
°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
1000
3.3
4.00
250
1000
±100
2
4
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250
A)
On State Drain Current 2 (V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance 2 (V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°C)
Gate-Source Leakage Current (V
GS
=
±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0mA)
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
LM
Characteristic
Safe Operating Area
Inductive Current Clamped
Test Conditions
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
MIN
TYP
MAX
100
3.3
UNIT
Watts
Amps
TO-257
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