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参数资料
| 型号： | APT1004RGN |
| 元件分类： | JFETs |
| 英文描述： | 3.3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 文件页数： | 4/4页 |
| 文件大小： | 50K |
| 代理商： | APT1004RGN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
10.67 (.420)
10.41 (.410)
5.33 (.210)
5.20 (.205)
19.05 (.750)
12.07 (.500)
10.92 (.430)
10.41 (.410)
.889 (.035) Dia. 3-Plcs.
.635 (.025)
2.54 (.100) BSC
5.08 (.200)
4.83 (.190)
3.05 (.120) BSC
1.14 (.045)
0.89 (.035)
3.81 (.150) Dia.
3.56 (.140)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
16.89 (.665)
16.38 (.645)
13.64 (.537)
13.38 (.527)
TO-257AA Package Outline
APT1004RGN
10
S
100
S
1mS
10mS
100mS
DC
10,000
1,000
100
10
100
50
20
10
5
2
1
5
10
50 100
500 1000
0
10
20
30
40
50
0
20
40
60
80
100
0
0.5
1.0
1.5
2.0
050-0019
Rev
B
15
10
5
1
0.5
0.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
TJ =+150°CTJ =+25°C
VDS=500V
VDS=200V
VDS=100V
Crss
Ciss
Coss
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
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PDF描述 |
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| APT10078BFLL | 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT10078SFLLG | 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT1004RKN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT10050B2LC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage |
| APT10050B2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10050B2VFR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10050B2VFRG | 功能描述:MOSFET N-CH 1000V 21A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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