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参数资料
| 型号： | APT10050JN |
| 元件分类： | JFETs |
| 英文描述： | 20.5 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 4/4页 |
| 文件大小： | 60K |
| 代理商： | APT10050JN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT10050JN
TC =+25°C
TJ =+150°C
SINGLE PULSE
100
50
10
5
1
.5
.1
20
16
12
8
4
0
20,000
10,000
5,000
1,000
500
100
200
160
120
80
40
0
I
D
= I
D
[Cont.]
Ciss
OPERATION HERE
LIMITED BY RDS (ON)
Crss
Coss
10
S
100
S
1mS
10mS
100mS
DC
VDS=100V
VDS=200V
VDS=500V
TJ =+150°C
TJ =+25°C
1
5
10
50 100
500 1000
.1
.5
1
5
10
50
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
TJ =-55°C
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP) Package Outline
ISOTOP is a Registered Trademark of SGS Thomson.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-0037
Rev
F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10050JVFR | 功能描述:MOSFET N-CH 1000V 19A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT10050JVFR_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10050JVR | 功能描述:MOSFET N-CH 1000V 19A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT10050LLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage |
| APT10050LVFR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 1KV 21A 3-Pin(3+Tab) TO-264 |
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