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参数资料
| 型号： | APT10088HVR |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 1000 V, 0.88 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258 |
| 封装： | TO-258, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 491K |
| 代理商： | APT10088HVR |
10
Power MOS V MOSFET Technology...isapatentedself-
aligned interdigitated open cell structure with improved switching and R
DS(ON) advantages over our
previous MOS IV generation and over industry standard closed cell devices.
Feature
Result
Benefit
Increased packing density
Lower R
DS(ON)
Lower conduction losses
Lower temperature
Shallower diffusions
Lower Capacitances and
Faster switching speeds
gate charge
Less switching loses
Redesigned rings
Higher blocking voltages
Improved reliability
Lower leakage currents
Chip layout changes
More uniform signal
Faster switching
propagation
Avalanche Energy Rated
100% tested and guaranteed
More robust design
PowerMOS V FREDFETTechnology...hasallthe features
and benefits of the Power MOS V MOSFET with a faster recovery intrinsic body diode.
Faster reverse recovery (250ns)
-
Eliminates the need for external FRED or Schottky rectifiers
Improved ruggedness of intrinsic diode
-
Commutative dv/dt rating of >5V/ns
Soft recovery, low leakage current, lower recovery charge
Used whenever intrinsic diode is expected to carry forward current
-
Half Bridge, Full Bridge, 3-Phase Bridge topologies
Contact your local APT Representative or APT directly for information regarding the availability of
Hermetic FREDFETs.
Standard Power MOSFETs
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PDF描述 |
|---|---|
| APT6017WVR | 31.5 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267 |
| 2N7228R1 | 12 A, 500 V, 0.515 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7228 | 8 A, 500 V, 0.515 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7261 | 8 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N7269U | 26 A, 200 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10090BFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT10090BFLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
| APT10090BFLLG | 功能描述:MOSFET N-CH 1000V 12A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT10090BLL | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247 |
| APT10090BLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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