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参数资料
| 型号： | APT10M11JVRU2 |
| 元件分类： | JFETs |
| 英文描述： | 142 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/7页 |
| 文件大小： | 730K |
| 代理商： | APT10M11JVRU2 |
APT10M11JVRU2
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APT website – http://www.advancedpower.com
1 – 7
ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
142
ID
Continuous Drain Current
Tc = 80°C
106
IDM
Pulsed Drain current
576
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
11
m
PD
Maximum Power Dissipation
Tc = 25°C
450
W
IAR
Avalanche current (repetitive and non repetitive)
144
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
IFAV
Maximum Average Forward Current
Duty cycle=0.5
Tc = 90°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
47
A
VDSS = 100V
RDSon = 11m max @ Tj = 25°C
ID = 142A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
ISOTOP Boost chopper
MOSFET Power Module
K
D
G
S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT10M11JVRU3 | 功能描述:MOSFET N-CH 100V 142A SOT227 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APT10M11LVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:High Voltage N-Channel enhancement mode power MOSFET |
| APT10M11LVFRG | 功能描述:MOSFET N-CH 100V 100A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT10M11LVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
| APT10M13JNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 150A I(D) |
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