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参数资料
| 型号： | APT11044LFLLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 101K |
| 代理商： | APT11044LFLLG |
050-7177
Rev
A
11-2003
APT11044B2FLL - LFLL
Typical Performance Curves
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
5.5V
6V
6.5V
5V
VGS =15 & 10V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7V
0
5
10
15
20
25
30
0
12345678
0
10
20
30
40
50
60
25
50
75
100
125
150
-50 -25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
70
60
50
40
30
20
10
0
30
25
20
15
10
5
0
3
2.5
2.0
1.5
1.0
0.5
0
I
D
= 13A
V
GS
= 10V
NORMALIZED TO
V
GS
= 10V @ 13A
50
45
40
35
30
25
20
15
10
5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.0271
0.0656
0.0859
0.00899F
0.0202F
0.293F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
相关PDF资料 |
PDF描述 |
|---|---|
| APT11044B2FLL | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT11044B2FLLG | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT11044LFLL | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT11044B2FLL | 26 A, 1100 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT110GL100JN | 110 A, 1000 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT11058B2FLL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Volts:1100V RDS(ON)0.58Ohms ID(cont):20Amps|FREDFETs ( fast body diode) |
| APT11058JFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11058LFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11F80B | 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT11F80S | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 800V 12A D3PAK |
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