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参数资料
| 型号： | APT11GP60SA |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封装： | TO-263, D2PAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 170K |
| 代理商： | APT11GP60SA |
050-7419
Rev
B
6-2004
APT11GP60K_SA
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 300V
IC = 11A
TJ = 150°C, RG = 5, VGE =
15V, L = 100H,VCE = 600V
Inductive Switching (25°C)
VCC = 400V
VGE = 15V
IC = 11A
RG = 5
TJ = +25°C
Inductive Switching (125°C)
VCC = 400V
VGE = 15V
IC = 11A
RG = 5
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
MIN
TYP
MAX
1210
110
6
7.5
40
8
13
45
7
9
29
50
46
85
90
7
9
65
85
46
185
215
UNIT
pF
V
nC
A
ns
J
ns
J
UNIT
°C/W
gm
MIN
TYP
MAX
0.67
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RΘJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2 test circuit. (See Figures 21, 22.)
6E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
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相关代理商/技术参数 |
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| APT11N80BC3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT11N80BC3G | 功能描述:MOSFET N-CH 800V 11A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| APT11N80KC3G | 功能描述:MOSFET N-CH 800V 11A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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