- 您现在的位置：买卖IC网 > PDF目录51262 > APT11GP60SA 41 A, 600 V, N-CHANNEL IGBT, TO-263AB PDF资料下载
参数资料
| 型号： | APT11GP60SA |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封装： | TO-263, D2PAK-3 |
| 文件页数： | 6/6页 |
| 文件大小： | 170K |
| 代理商： | APT11GP60SA |
050-7419
Rev
B
6-2004
APT11GP60K_SA
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
IC
VCLAMP
100uH
VTEST
A
B
D.U.T.
DRIVER*
VCE
Figure 24, EON1 Test Circuit
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
A
D.U.T.
APT15DS30
VCE
Figure 21, Inductive Switching Test Circuit
VCC
Emitter
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
Gate
Collector
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
12.192 (.480)
9.912 (.390)
3.683 (.145)
MAX.
TO-220AC Package Outline (K)
TO-263 (D2) Surface mount Package Outline (SA)
10.06 (.396)
10.31(.406)
1.22 (.048)
1.32 (.052)
{3 Plcs.}
2.54 (.100) BSC
{2 Plcs.}
4.45 (.175)
4.57 (.180)
1.27 (.050)
1.32 (.052)
0.330 (.013)
0.432 (.017)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
Collector (Heat
Sink)
Gate
Collector
Emitter
0.000 (.000)
0.254 (.010)
6.02 (.237)
6.17 (.243)
1.40 (.055)
1.65 (.065)
7.54 (.297)
7.68 (.303)
8.51 (.335)
8.76(.345)
0.762 (.030)
0.864 (.034)
{2 Plcs.}
0.050 (.002)
2.62 (.103)
2.72 (.107)
3.68 (.145)
6.27 (.247)
(Base of Lead)
APT15DF60
T
J = 125°C
Drain Current
DrainVoltage
GateVoltage
5%
10%
t
d(on)
90%
10%
t
r
5%
Switching Energy
T
J = 125°C
DrainVoltage
Drain Current
GateVoltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
相关PDF资料 |
PDF描述 |
|---|---|
| APT11GP60K | 41 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60K | 41 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| APT11GP60SAG | 41 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| APT11N80KC3 | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APT11N80KC3 | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT11N80BC3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT11N80BC3G | 功能描述:MOSFET N-CH 800V 11A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT11N80KC3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT11N80KC3G | 功能描述:MOSFET N-CH 800V 11A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1201R2BFLL | 制造商:Microsemi Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。