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参数资料
| 型号： | APT11N80KC3 |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 162K |
| 代理商： | APT11N80KC3 |
DYNAMIC CHARACTERISTICS
APT11N80KC3
050-7135
Rev
A
4-2004
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -11A)
Reverse Recovery Time (I
S = 11A, dlS/dt = -100A/s, VR = 640V)
Reverse Recovery Charge (I
S = 11A, dlS/dt = -100A/s, VR = 640V)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
11
33
1
1.2
550
10
6
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.80
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 400V
I
D = 11A @ 25°C
RESISTIVESWITCHING
V
GS = 10V
V
DD = 400V
I
D = 11A @ 25°C
R
G = 7.5
INDUCTIVE SWITCHING @ 25°C
V
DD = 533V, VGS = 15V
I
D = 11A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 533V VGS = 15V
I
D = 11A, RG = 5
MIN
TYP
MAX
1585
770
18
60
8
30
25
15
70
80
710
165
50
305
65
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 194mH, RG = 25, Peak IL = 2.2A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID 11A
di/dt ≤ 700A/s V
R ≤ VDSS
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as P
AV=EAR*f
APT Reserves the right to change, without notice, the specifications and information contained herein.
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相关代理商/技术参数 |
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| APT11N80KC3G | 功能描述:MOSFET N-CH 800V 11A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1201R2BFLL | 制造商:Microsemi Corporation 功能描述: |
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| APT1201R2BLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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