- 您现在的位置：买卖IC网 > PDF目录51262 > APT11N80KC3 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | APT11N80KC3 |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 162K |
| 代理商： | APT11N80KC3 |
APT11N80KC3
050-7135
Rev
A
4-2004
IC
D.U.T.
APT15DF60B
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
10%
5% 10%
t
d(on)
t
r
90%
Collector Current
Collector Voltage
Gate Voltage
T
J = 125 C
5 %
Switching Energy
TJ = 125 C
90%
t
d(off)
0
t
f
90%
10%
Gate Voltage
Collector Current
Collector Voltage
Switching Energy
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
TO-220AC Package Outline
Source
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
4.82 (.190)
3.56 (.140)
1.39 (.055)
0.51 (.020)
4.08 (.161) Dia.
3.54 (.139)
Dimensions in Millimeters and (Inches)
16.51 (.650)
14.23 (.560)
6.35 (.250)
MAX.
Gate
Drain
6.85 (.270)
5.85 (.230)
1.77 (.070) 3-Plcs.
1.15 (.045)
2.92 (.115)
2.04 (.080)
3.42 (.135)
2.54 (.100)
0.50 (.020)
0.41 (.016)
5.33 (.210)
4.83 (.190)
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| APT11N80KC3 | 11 A, 800 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APT1201R2BLL | 12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1201R2SLL | 12 A, 1200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1201R4BFLL | 9 A, 1200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| APT1201R4SFLL | 9 A, 1200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT11N80KC3G | 功能描述:MOSFET N-CH 800V 11A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1201R2BFLL | 制造商:Microsemi Corporation 功能描述: |
| APT1201R2BFLLG | 功能描述:MOSFET N-CH 1200V 12A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT1201R2BLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT1201R2SFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
发布紧急采购，3分钟左右您将得到回复。