型号: | APT1201R4SLL |
厂商: | Advanced Power Technology Ltd. |
英文描述: | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
中文描述: | 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代。 |
文件页数: | 2/2页 |
文件大小: | 69K |
代理商: | APT1201R4SLL |
相关PDF资料 |
PDF描述 |
---|---|
APT12031JLL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
APT12067B2LL | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS |
APT12GT60BR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs |
APT12GT60KR | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
APT20GF120BR | The Fast IGBT is a new generation of high voltage power IGBTs. |
相关代理商/技术参数 |
参数描述 |
---|---|
APT1201R5BVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V |
APT1201R5BVFRG | 功能描述:MOSFET N-CH 1200V 10A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
APT1201R5BVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
APT1201R5BVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR 制造商:Microsemi 功能描述:POWER MOSFET TRANSISTOR |
APT1201R5SVFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V |