- 您现在的位置：买卖IC网 > PDF目录369364 > APT12GT60KR (Advanced Power Technology Ltd.) The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. PDF资料下载
参数资料
| 型号： | APT12GT60KR |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的迅雷是IGBT的高压电源IGBT的新一代。 |
| 文件页数： | 1/2页 |
| 文件大小： | 24K |
| 代理商： | APT12GT60KR |
G
C
E
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
PRELMNARY
MIN
TYP
MAX
600
-15
3
4
5
1.6
2.0
2.5
2.8
40
1000
±
100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.4mA, T
j
= -55
°
C)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 350
μ
A, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25
°
C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 150
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25
°
C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 150
°
C)
Gate-Emitter Leakage Current (V
GE
=
±
20V, V
CE
= 0V)
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
μ
A
nA
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K
)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25
°
C
Continuous Collector Current @ T
C
= 115
°
C
Pulsed Collector Current
1
@ T
C
= 25
°
C
Pulsed Collector Current
1
@ T
C
= 115
°
C
Single Pulse Avalanche Energy
2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT12GT60BR
600
600
15
±
20
25
12
50
24
18
125
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°
C
0
APT12GT60BR
600V
25A
The Thunderbolt IGBT
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
Low Tail Current
Avalanche Rated
High Freq. Switching to 150KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
TO-247
GCE
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
相关PDF资料 |
PDF描述 |
|---|---|
| APT20GF120BR | The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT20GF120BRD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GF120KR | The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT2X30D120J | CONNECTOR ACCESSORY |
| APT2X31D120J | CONNECTOR ACCESSORY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT12GT60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING - Rail/Tube |
| APT12M80B | 功能描述:MOSFET N-CH 800V 13A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT12M80S | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT13003D | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |
| APT13003DI-G1 | 制造商:BCDSEMI 制造商全称:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。