- 您现在的位置：买卖IC网 > PDF目录369364 > APT20GF120BRD (Advanced Power Technology Ltd.) The Fast IGBT⑩ is a new generation of high voltage power IGBTs. PDF资料下载
参数资料
| 型号： | APT20GF120BRD |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的快速IGBT是一种高压IGBT的新一代。 |
| 文件页数： | 1/5页 |
| 文件大小： | 74K |
| 代理商： | APT20GF120BRD |
0
APT20GF120BR
G
C
E
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
APT20GF120BR
1200V
32A
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
Low Tail Current
Avalanche Rated
High Freq. Switching to 20KHz
Ultra Low Leakage Current
RBSOA and SCSOA Rated
TO-247
GCE
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)557 9215 15
FAX: (33)5 5647 9761
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.3
3.2
3.9
0.8
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.8mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 350μA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
I
CES
I
GES
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20K )
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
@ T
C
= 25°C
RBSOA Clamped Inductive Load Current @ R
g
= 11
Single Pulse Avalanche Energy
2
T
C
= 125°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT20GF120BR
1200
1200
±20
32
20
64
40
22
200
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
相关PDF资料 |
PDF描述 |
|---|---|
| APT20GF120KR | The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT2X30D120J | CONNECTOR ACCESSORY |
| APT2X31D120J | CONNECTOR ACCESSORY |
| APT2X30D20J | CONNECTOR ACCESSORY |
| APT2X31D20J | CONNECTOR ACCESSORY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20GF120BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT20GF120BRDQ1G | 功能描述:IGBT 1200V 36A 200W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GF120BRG | 功能描述:IGBT 1200V 32A 200W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GF120KR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT20GF120KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - SING - Rail/Tube |
发布紧急采购，3分钟左右您将得到回复。