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| 型号： | APT20GF120BRD |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的快速IGBT是一种高压IGBT的新一代。 |
| 文件页数： | 4/5页 |
| 文件大小： | 74K |
| 代理商： | APT20GF120BRD |
0
APT20GF120BR
5.0
4.0
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
10
1
0.1
100
10
1
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +25
°
C
I
C
= I
C2
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +125
°
C
R
G
= 10
V
CC
= 0.66 V
CES
V
GE
= +15V
R
G
= 10
I
C1
0.5 I
C2
I
C2
I
C1
E
on
E
off
E
on
E
off
0.5 I
C2
I
C2
T
, JUNCTION TEMPERATURE (
°
C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
B
C
,
T
, CASE TEMPERATURE (
°
C)
Figure 9, Maximum Collector Current vs Case Temperature
5.0
T
, JUNCTION TEMPERATURE (
°
C)
Figure 10, Breakdown Voltage vs Junction Temperature
R
, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
T
, JUNCTION TEMPERATURE (
°
C)
I
, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
-50
-25
0
25
50
75
100
125
150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125
150
0
20
40
60
80
100
-50
-25
0
25
50
75
100
125 150
0
4
8
12
16
20
0.1
1.0
10
100
1000
40
30
20
10
0
4.0
3.0
2.0
1.0
0
1.6
1.2
0.8
0.4
0
For Both:
Duty Cycle = 50%
T
J
= +125
°
C
T
= +90
°
C
Gate drive as specified
Power dissapation = 56W
I
LOAD
= I
RMS
of fundamental
I
C
,
T
V
C
(
V
S
S
S
I
C
,
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT20GF120BRDQ1 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:FAST IGBT & FRED |
| APT20GF120BRDQ1G | 功能描述:IGBT 1200V 36A 200W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GF120BRG | 功能描述:IGBT 1200V 32A 200W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT20GF120KR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT20GF120KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - SING - Rail/Tube |
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