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参数资料
| 型号： | APT12GT60KR |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| 中文描述： | ⑩的迅雷是IGBT的高压电源IGBT的新一代。 |
| 文件页数： | 2/2页 |
| 文件大小： | 24K |
| 代理商： | APT12GT60KR |
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
APT12GT60BR
UNIT
°
C/W
lbin
MIN
TYP
MAX
1.0
80
10
Characteristic
Junction to Case
Junction to Ambient
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
R
Θ
JC
R
Θ
JA
Torque
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
°
C)
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
R
G
= 10
Inductive Switching (150
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +150
°
C
Inductive Switching (25
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +25
°
C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
580
75
50
65
34
5
8
22
80
110
12
6
150
120
0.10
0.40
0.50
12
6
120
45
0.22
2
6.7
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
,
V
CC
= 50V,
R
GE
= 25
,
L = 250
μ
H, T
j
= 25
°
C
2
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
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