参数资料
型号: APT12040JLL
元件分类: JFETs
英文描述: 24 A, 1200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ISOTOP-4
文件页数: 5/5页
文件大小: 109K
代理商: APT12040JLL
050-7124
Rev
B
12-2003
APT12040JLL
Typical Performance Curves
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
90%
10%
0
t
f
t
d(off)
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
T
J
= 125 C
IC
D.U.T.
APT30DF120
VCE
Figure 20, Inductive Switching Test Circuit
G
VDD
Switching Energy
Gate Voltage
Drain Current
Drain Voltage
T
J
= 125 C
5 %
10 %
t
d(on)
5 %
t
r
90%
10 %
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
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